Highly conducting transparent thin films based on zinc oxide
Identifieur interne : 019B36 ( Main/Repository ); précédent : 019B35; suivant : 019B37Highly conducting transparent thin films based on zinc oxide
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Abstract
Doped zinc oxide thin films were prepared by rf magnetron sputtering using the dopants Al, Ga, In, and Ge. The best results were obtained with Al and Ga doping where room temperature conductivities were as high as 1600 and 1800 ohm-1 cm-1, respectively. Hall measurements were performed at 77 K and 298 K. The Hall mobility as in the range of 9 to 22 cm2/Vs, and there was generally very little temperature dependence of the mobility or conductivity. Cation doping levels were as high as 10 at.%, but the conductivities did not increase beyond 3 at.% doping level. For films with high conductivity, electron carrier concentrations from Hall measurements were significantly lower than the concentrations of dopants. Optical measurements on the films showed that the average transmittance through the visible range is higher than 85%. The measurements also indicated a blue shift of the absorption edge with doping. © 1996 Materials Research Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Highly conducting transparent thin films based on zinc oxide</title><author><name sortKey="Wang, R" uniqKey="Wang R">R. Wang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry, Oregon State University, Corvallis</wicri:cityArea></affiliation></author><author><name sortKey="King, L L H" uniqKey="King L">L. L. H. King</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry, Oregon State University, Corvallis</wicri:cityArea></affiliation></author><author><name sortKey="Sleight, A W" uniqKey="Sleight A">A. W. Sleight</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Chemistry, Oregon State University, Corvallis</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0104015</idno><date when="1996-07">1996-07</date><idno type="stanalyst">PASCAL 97-0104015 AIP</idno><idno type="RBID">Pascal:97-0104015</idno><idno type="wicri:Area/Main/Corpus">018C16</idno><idno type="wicri:Area/Main/Repository">019B36</idno></publicationStmt><seriesStmt><idno type="ISSN">0884-2914</idno><title level="j" type="abbreviated">J. mater. res.</title><title level="j" type="main">Journal of materials research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium additions</term><term>Ambient temperature</term><term>Doped materials</term><term>Electric conductivity</term><term>Experimental study</term><term>Gallium additions</term><term>Germanium additions</term><term>Hall effect</term><term>Indium additions</term><term>Optical properties</term><term>Thin films</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Matériau dopé</term><term>Zinc oxyde</term><term>Addition aluminium</term><term>Addition gallium</term><term>Addition indium</term><term>Addition germanium</term><term>Conductivité électrique</term><term>Effet Hall</term><term>Propriété optique</term><term>Température ambiante</term><term>8105H</term><term>8115C</term><term>7361L</term><term>7866L</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Doped zinc oxide thin films were prepared by rf magnetron sputtering using the dopants Al, Ga, In, and Ge. The best results were obtained with Al and Ga doping where room temperature conductivities were as high as 1600 and 1800 ohm<sup>-1</sup> cm<sup>-1</sup>, respectively. Hall measurements were performed at 77 K and 298 K. The Hall mobility as in the range of 9 to 22 cm<sup>2</sup>/Vs, and there was generally very little temperature dependence of the mobility or conductivity. Cation doping levels were as high as 10 at.%, but the conductivities did not increase beyond 3 at.% doping level. For films with high conductivity, electron carrier concentrations from Hall measurements were significantly lower than the concentrations of dopants. Optical measurements on the films showed that the average transmittance through the visible range is higher than 85%. The measurements also indicated a blue shift of the absorption edge with doping. © 1996 Materials Research Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0884-2914</s0></fA01><fA02 i1="01"><s0>JMREEE</s0></fA02><fA03 i2="1"><s0>J. mater. res.</s0></fA03><fA05><s2>11</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Highly conducting transparent thin films based on zinc oxide</s1></fA08><fA11 i1="01" i2="1"><s1>WANG (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>KING (L. L. H.)</s1></fA11><fA11 i1="03" i2="1"><s1>SLEIGHT (A. W.)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, Oregon State University, Corvallis, Oregon 97331-4003</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>1659-1664</s1></fA20><fA21><s1>1996-07</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21884</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0104015</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of materials research</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Doped zinc oxide thin films were prepared by rf magnetron sputtering using the dopants Al, Ga, In, and Ge. The best results were obtained with Al and Ga doping where room temperature conductivities were as high as 1600 and 1800 ohm<sup>-1</sup> cm<sup>-1</sup>, respectively. Hall measurements were performed at 77 K and 298 K. The Hall mobility as in the range of 9 to 22 cm<sup>2</sup>/Vs, and there was generally very little temperature dependence of the mobility or conductivity. Cation doping levels were as high as 10 at.%, but the conductivities did not increase beyond 3 at.% doping level. For films with high conductivity, electron carrier concentrations from Hall measurements were significantly lower than the concentrations of dopants. Optical measurements on the films showed that the average transmittance through the visible range is higher than 85%. The measurements also indicated a blue shift of the absorption edge with doping. © 1996 Materials Research Society.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A20</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61L</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Matériau dopé</s0></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Doped materials</s0></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Addition aluminium</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Aluminium additions</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Addition gallium</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium additions</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Addition indium</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium additions</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Addition germanium</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Germanium additions</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Conductivité électrique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Electric conductivity</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Effet Hall</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Hall effect</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Propriété optique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Optical properties</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Température ambiante</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Ambient temperature</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>8105H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="13" i2="3" l="FRE"><s0>8115C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="14" i2="3" l="FRE"><s0>7361L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="15" i2="3" l="FRE"><s0>7866L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Matériau pulvérisé</s0></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Sputtered materials</s0></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Domaine température 65-273 K</s0></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Temperature range 65-273 K</s0></fC07><fN21><s1>229</s1></fN21><fN47 i1="01" i2="1"><s0>9714M00640</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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